For fine-line patterning in the semi-additive process; stable, controllable copper etch rate with downward etching twice the lateral rate, reducing undercut.
Key Features
Suitable for fine-line patterning in the semi-additive process.
Downward etch rate is twice the lateral rate, minimizing undercut for stable flash-etch results.
Maintains good line profile even at 12 μm etch.
Performance / Application Notes
Copper foil surface morphology before and after flash etch: left, before; right, after 8 μm etching.Side-wall profile of a 50 μm line in mSAP before/after flash etch: ~7.8 μm lateral micro-etch per side, 12.3 μm downward micro-etch — downward rate ≈ 1.6× lateral rate.