For fine-line patterning: enables 30/30 μm lines with subtractive process — lower cost, simpler flow, more stable process and higher yield than mSAP.
Key Features
Suitable for fine-line patterning; achieves 30/30 μm lines with subtractive process.
Lower cost than mSAP — no new equipment investment; simply add to existing lines.
Simpler than mSAP — fully compatible with existing process flow, no flow changes.
Mature formulation, stable process and high fine-line yield.
Performance / Application Notes
Cross-section measurements of etched circuitry before adding the barrier agent (EF = 3.8).Cross-section measurements of etched circuitry after adding the barrier agent (EF = 9.0).
