For the semi-additive process — strips fine-line L/S 16 μm/16 μm and above; also removes secondary dry film after selective ENIG / electroless nickel immersion gold.
Key Features
Suitable for semi-additive process; strips fine lines of L/S 16 μm/16 μm and above.
Also removes secondary dry film after selective electrolytic Ni/Au and ENIG, without attacking gold or solder mask.
Fast stripping: 30–40 s for standard dry film (e.g. Asahi YQ40), 90–100 s for secondary dry film.
Highly compatible — no equipment material changes required.
Fine film debris allows a filter to effectively reduce chemical consumption.
Performance / Application Notes
Stripping principle: the chemical spray lifts the dry film off the copper, exposing the conductor pattern while the base material remains unaffected.Due to a different stripping mechanism, organic stripper produces much finer dry-film debris than NaOH-based stripping.
